- Manufacture :
- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Qg - Gate Charge :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3,149
In-stock
|
Infineon Technologies | MOSFET N-Ch 600V 2.3A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.3 A | 2.1 Ohms | 3 V | 6.7 nC | CoolMOS | |||||
|
185
In-stock
|
Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement | |||||
|
365
In-stock
|
Diodes Incorporated | MOSFET N-CH MOSFET 650V 4A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 4 A | 2.1 Ohms | 3 V | 13.5 nC | Enhancement |