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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode Tradename
FQP3N30
1+
$0.830
10+
$0.684
100+
$0.442
1000+
$0.353
RFQ
5,574
In-stock
Fairchild Semiconductor MOSFET 300V N-Channel QFET 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 300 V 3.2 A 2.2 Ohms   Enhancement QFET
FQPF3N25
1+
$0.940
10+
$0.800
100+
$0.614
500+
$0.543
RFQ
956
In-stock
Fairchild Semiconductor MOSFET 250V N-Channel QFET 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 2.3 A 2.2 Ohms   Enhancement QFET
2SK3742(Q,M)
VIEW
RFQ
Toshiba MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 900 V 5 A 2.2 Ohms 25 nC    
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