5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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184
In-stock
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IXYS | MOSFET HiPERFET Id12 BVdass500 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | Enhancement | HyperFET | |||||
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100
In-stock
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IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||
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175
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||||
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68
In-stock
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IXYS | MOSFET 12 Amps 500V 0.5 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar | |||
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200
In-stock
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IXYS | MOSFET 700V/4A Ultra Junct X2-Class MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement |
