- Manufacture :
- Mounting Style :
- Id - Continuous Drain Current :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
417
In-stock
|
STMicroelectronics | MOSFET N-Ch, 600V-0.45ohms 13.5A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 13.5 A | 500 mOhms | Enhancement | ||||||
|
588
In-stock
|
Toshiba | MOSFET N-Ch 7A 30W FET 600V 490pF 15nC | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7 A | 500 mOhms | 2.7 V to 3.7 V | 15 nC | Enhancement | |||||
|
71
In-stock
|
Toshiba | MOSFET N-Ch MOS 10A 40V 25W 410pF 0.029 | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 450 V | 11 A | 500 mOhms | 20 nC |