- Mounting Style :
- Minimum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Qg - Gate Charge :
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25 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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8,273
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1 Ohms | Enhancement | ||||||
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7,464
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | Enhancement | ||||||
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3,293
In-stock
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STMicroelectronics | MOSFET N-Ch 400 Volt 5.4 A Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | Enhancement | ||||||
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406
In-stock
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IXYS | MOSFET 1500 V High Voltage Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 20 A | 1 Ohms | 4.5 V | 215 nC | Enhancement | |||||
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2,452
In-stock
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Diodes Incorporated | MOSFET Transistor PNP 30Vceo | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 700 V | 3.9 A | 1 Ohms | 2.9 V | 13.9 nC | Enhancement | PowerDI | |||
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53,920
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 4.2A ThinPAK 5x6 | 30 V | SMD/SMT | ThinPAK-56-8 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 4.2 A | 1 Ohms | 3 V | 15 nC | CoolMOS | ||||
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1,664
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1 Ohms | 3 V | 21.5 nC | Enhancement | ||||
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2,679
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel Advance QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 4.5 A | 1 Ohms | Enhancement | ||||||
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1,837
In-stock
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Fairchild Semiconductor | MOSFET N-CH/600V/7A/ SuperFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.9 A | 1 Ohms | Enhancement | SuperFET | |||||
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147,700
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Chl MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3.9 A | 1 Ohms | Enhancement | SuperFET | |||||
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1,103
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.3 A | 1 Ohms | Enhancement | QFET | |||||
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988
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | ||||||
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798
In-stock
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Fairchild Semiconductor | MOSFET 600V 7.4A 1Ohm N-Channel | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | QFET | |||||
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GET PRICE |
289,640
In-stock
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onsemi | MOSFET NFET SOT23 60V 310MA 2.5 | 30 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 60 V | 310 mA | 1 Ohms | 1.9 V | 810 pC | Enhancement | |||
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932
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 6 A | 1 Ohms | Enhancement | QFET | |||||
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761
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | ||||||
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387
In-stock
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Toshiba | MOSFET N-Ch MOS 7A 500V 35W 600pF 1.22 | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 7 A | 1 Ohms | 4.4 V | 12 nC | ||||||
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250
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.2 A | 1 Ohms | 2.5 V | 10.5 nC | Enhancement | ||||
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388
In-stock
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Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-3PN | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement | ||||
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46,800
In-stock
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Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 14 Amps 1000V | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 9.5 A | 1 Ohms | Enhancement | HyperFET | |||||
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2,461
In-stock
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STMicroelectronics | MOSFET N-channel 525 V MDMesh | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 5 A | 1 Ohms | 25 nC | ||||||
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701
In-stock
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STMicroelectronics | MOSFET N-Ch, 400V-0.85ohms 5.4A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 5.4 A | 1 Ohms | 3.75 V | 19 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 5 Amp | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1 Ohms | Enhancement | ||||||
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2,481
In-stock
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Fairchild Semiconductor | MOSFET 400V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 400 V | 4.5 A | 1 Ohms | Enhancement |
