- Manufacture :
- Mounting Style :
- Maximum Operating Temperature :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
-
- 1.1 Ohms (3)
- 1.2 Ohms (1)
- 1.4 Ohms (2)
- 100 mOhms (3)
- 125 mOhms (1)
- 165 mOhms (2)
- 170 mOhms (1)
- 2 Ohms (4)
- 2.9 Ohms (3)
- 230 mOhms (1)
- 270 mOhms (1)
- 350 mOhms (1)
- 400 mOhms (1)
- 45 mOhms (2)
- 450 mOhms (3)
- 5 Ohms (1)
- 500 mOhms (3)
- 55 mOhms (1)
- 56 mOhms (1)
- 6.5 Ohms (2)
- 60 mOhms (1)
- 720 mOhms (1)
- 740 mOhms (1)
- 800 mOhms (1)
- 82 mOhms (1)
- 85 mOhms (1)
- 9 Ohms (1)
- 90 mOhms (1)
- 92 mOhms (1)
- Qg - Gate Charge :
-
- 10.6 nC (1)
- 12.6 nC (2)
- 13 nC (1)
- 150 nC (1)
- 20 nC (2)
- 26 nC (1)
- 27 nC (2)
- 28 nC (1)
- 29 nC (3)
- 3.9 nC (2)
- 32 nC (1)
- 33 nC (1)
- 36 nC (3)
- 37 nC (1)
- 4.5 nC (1)
- 40 nC (2)
- 43 nC (1)
- 5.2 nC (1)
- 50 nC (1)
- 550 nC (1)
- 57 nC (2)
- 58 nC (1)
- 60 nC (1)
- 61 nC (1)
- 65 nC (1)
- 70 nC (2)
- 72 nC (2)
- 9.3 nC (3)
- 9.8 nC (3)
- 91 nC (1)
46 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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13,233
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 0.9A 1200mOhm 4.5nC | 30 V | SMD/SMT | TSOP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 900 mA | 1.2 Ohms | 5.5 V | 4.5 nC | |||||
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3,066
In-stock
|
IR / Infineon | MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 5.5 V | 33 nC | Enhancement | ||||
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300
In-stock
|
IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | |||
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5,332
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
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2,641
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 125mOhms 28nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 18 A | 125 mOhms | 5.5 V | 28 nC | Enhancement | ||||
|
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1,498
In-stock
|
Infineon Technologies | MOSFET 200V SINGLE N-CH 55mOhms 91nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 55 mOhms | 5.5 V | 91 nC | Enhancement | ||||
|
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5,000
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 5.5 V | 60 nC | Enhancement | ||||
|
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2,555
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
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110
In-stock
|
IXYS | MOSFET 62 Amps 500V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 62 A | 100 mOhms | 5.5 V | 550 nC | Enhancement | Linear | |||
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573
In-stock
|
IXYS | MOSFET 36 Amps 300V 0.11 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 36 A | 92 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
|
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1,957
In-stock
|
IR / Infineon | MOSFET 200V 1 N-CH HEXFET PWR MOSFET 165mOhms | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 17 A | 165 mOhms | 5.5 V | 27 nC | Enhancement | ||||
|
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142
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 2.5A 170mOhm 26nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 5.5 V | 26 nC | Enhancement | ||||
|
|
595
In-stock
|
IXYS | MOSFET 600V 10A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5.5 V | 32 nC | Enhancement | ||||
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GET PRICE |
65,920
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 31A 82mOhm 70nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 31 A | 82 mOhms | 5.5 V | 70 nC | Enhancement | |||
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401
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 24A 100mOhm 57nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 5.5 V | 57 nC | Enhancement | ||||
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283
In-stock
|
IXYS | MOSFET 500V 12A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 12 A | 500 mOhms | 5.5 V | 29 nC | Enhancement | Polar, HiPerFET | |||
|
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157
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 45mOhms 72nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 41 A | 45 mOhms | 5.5 V | 72 nC | Enhancement | ||||
|
|
150
In-stock
|
IXYS | MOSFET 22 Amps 500V 0.27 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 270 mOhms | 5.5 V | 50 nC | Enhancement | PolarHV | |||
|
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255
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 23A 90mOhm 37nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 150 V | 23 A | 90 mOhms | 5.5 V | 37 nC | Enhancement | ||||
|
|
100
In-stock
|
IXYS | MOSFET 16.0 Amps 500 V 0.4 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 16 A | 400 mOhms | 5.5 V | 43 nC | Enhancement | PolarHV | |||
|
|
55
In-stock
|
IXYS | MOSFET DIODE Id14 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 720 mOhms | 5.5 V | 61 nC | Enhancement | PolarHV, HiPerFET | |||
|
|
441
In-stock
|
Infineon Technologies | MOSFET MOSFT 200V 24A 100mOhm 57nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 24 A | 100 mOhms | 5.5 V | 57 nC | Enhancement | ||||
|
|
280
In-stock
|
IXYS | MOSFET 3.6 Amps 500 V 2 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 3.6 A | 2 Ohms | 5.5 V | 9.3 nC | Enhancement | PolarHV | |||
|
|
50
In-stock
|
IXYS | MOSFET 3 Amps 600V 2.9 Ohms Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | |||
|
|
138
In-stock
|
IXYS | MOSFET 3 Amps 600V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | |||
|
|
79
In-stock
|
IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
|
|
177
In-stock
|
IXYS | MOSFET 3 Amps 600V 3 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 3 A | 2.9 Ohms | 5.5 V | 9.8 nC | Enhancement | PolarHV | |||
|
|
66
In-stock
|
IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
|
|
40
In-stock
|
IXYS | MOSFET 14.0 Amps 600 V 0.55 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 14 A | 450 mOhms | 5.5 V | 36 nC | Enhancement | PolarHV | |||
|
|
62
In-stock
|
IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET |
