- Manufacture :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
13 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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25
In-stock
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IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.5 kV | 3 A | 7.3 Ohms | 2.5 V | 38.6 nC | Enhancement | |||||
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101
In-stock
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IXYS | MOSFET High Voltage Power MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 2.5 V | 7.8 nC | Enhancement | |||||
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39
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 42 A | 110 mOhms | 2.5 V | 170 nC | Enhancement | |||||
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88
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1200 V | 14 A | 910 mOhms | 2.5 V | 145 nC | Enhancement | |||||
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25
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 14 A | 820 mOhms | 2.5 V | 120 nC | Enhancement | |||||
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48
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 17 A | 670 mOhms | 2.5 V | 150 nC | Enhancement | |||||
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2,500
In-stock
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Diodes Incorporated | MOSFET 600V N-Ch Enh Mode 2.3Ohm 10V 3.7A | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 3.7 A | 2 Ohms | 2.5 V | 14.3 nC | Enhancement | ||||
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1,400
In-stock
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onsemi | MOSFET NCH 10A 250V TP-FA(DPAK) | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10 A | 320 mOhms | 2.5 V | 16 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 6.8 A | 660 mOhms | 2.5 V | 15 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 5.8 A | 890 mOhms | 2.5 V | 11 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.1 A | 350 mOhms | 2.5 V | 25 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 9.3 A | 460 mOhms | 2.5 V | 20 nC | Enhancement |