- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
16
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 45 A | 120 mOhms | 2.5 V | 215 nC | Enhancement | |||||
|
69
In-stock
|
Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 105 mOhms | 2.5 V | 40 nC | Enhancement | ||||
|
45
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 19 A | 310 mOhms | 2.5 V | 90 nC | Enhancement | |||||
|
VIEW | Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 35 A | 320 mOhms | 2.5 V | 305 nC | Enhancement | |||||
|
31
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 60 A | 90 mOhms | 2.5 V | 280 nC | Enhancement | |||||
|
70
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 18 A | 420 mOhms | 2.5 V | 122 nC | Enhancement | |||||
|
105
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.76 Ohms | 2.5 V | 58 nC | Enhancement | |||||
|
5
In-stock
|
Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 41 A | 190 mOhms | 2.5 V | 260 nC | Enhancement | |||||
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 27.6 A | 94 mOhms | 2.5 V | 75 nC | Enhancement | ||||
|
VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 17.3 A | 170 mOhms | 2.5 V | 45 nC | Enhancement | ||||
|
VIEW | Toshiba | MOSFET N-Ch Power MOSFET Transistor | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 49.2 A | 55 mOhms | 2.5 V | 160 nC | Enhancement |