- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
16 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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172,000
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-3.8ohms Zener SuperMESH 2.5A | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 2.5 A | 4.5 Ohms | 4.5 V | 19 nC | Enhancement | ||||
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2,500
In-stock
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STMicroelectronics | MOSFET N-Ch 400V 2.7 Ohm 2A SuperMESH3 | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 400 V | 1.8 A | 3.4 Ohms | 4.5 V | 11 nC | |||||||
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3,183
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | ||||||
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807
In-stock
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IXYS | MOSFET 44 Amps 100V 25.0 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 85 V | 44 A | 22 mOhms | 4.5 V | 33 nC | Enhancement | TrenchMV | |||
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1,473
In-stock
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onsemi | MOSFET NFET IPAK 600V 2.2A 4.8R | 30 V | Through Hole | TO-247-3 | - 55 C | + 125 C | Tube | 1 Channel | Si | N-Channel | 600 V | 1.4 A | 4 Ohms | 4.5 V | 10.1 nC | |||||
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385
In-stock
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onsemi | MOSFET 600V 0.95 OHM TO- 220FP | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.5 A | 950 mOhms | 4.5 V | 39 nC | |||||
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238
In-stock
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IXYS | MOSFET 0.75 Amps 1000V 15 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
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154
In-stock
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IXYS | MOSFET 0.75 Amps 1000V 15 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
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77
In-stock
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IXYS | MOSFET 0.5 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 700 mA | 15 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
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86
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-3ohms Zener SuperMESH 3A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3 A | 3.5 Ohms | 4.5 V | 22.5 nC | Enhancement | ||||
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GET PRICE |
9,990
In-stock
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onsemi | MOSFET NFET DPAK 2.6A 3.6R | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 3.3 Ohms | 4.5 V | 12 nC | ||||
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VIEW | IXYS | MOSFET 48 Amps 200V 50 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 48 A | 50 mOhms | 4.5 V | 60 nC | Enhancement | Trench | |||
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86,000
In-stock
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Toshiba | MOSFET DTMOSIV 600V 600mOhm DPKw/Hgh Speed Diode | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 4.5 V | 16 nC | Enhancement | ||||
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95,000
In-stock
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STMicroelectronics | MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET | 30 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 2 A | 4.5 Ohms | 4.5 V | 12 nC | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.98 ohm 6.2A SuperFREDmesh3 | 30 V | SMD/SMT | TO-252-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 620 V | 6.2 A | 1.15 Ohms | 4.5 V | 34 nC | ||||||
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653
In-stock
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STMicroelectronics | MOSFET N-CH 650V 0.75Ohm 10A Zener-protected | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 10 A | 750 mOhms | 4.5 V | 42 nC | Enhancement | SuperMesh |
