Build a global manufacturer and supplier trusted trading platform.
Package / Case :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFH26N50P3
1+
$5.700
10+
$4.840
100+
$4.200
250+
$3.980
RFQ
79
In-stock
IXYS MOSFET Polar3 HiPerFET Power MOSFET 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 26 A 240 mOhms 5 V 42 nC Enhancement Polar3, HiperFET
IXTH26N60P
1+
$5.950
10+
$5.380
25+
$5.130
100+
$4.450
RFQ
30
In-stock
IXYS MOSFET 26.0 Amps 600 V 0.27 Ohm Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 26 A 270 mOhms 5 V 72 nC Enhancement PolarHV
IXTQ26N60P
30+
$5.290
120+
$4.590
270+
$4.350
510+
$3.910
VIEW
RFQ
IXYS MOSFET 26.0 Amps 600 V 0.27 Ohm Rds 30 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 26 A 270 mOhms 5 V 72 nC Enhancement PolarHV
Page 1 / 1