- Manufacture :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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658
In-stock
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STMicroelectronics | MOSFET N-Ch 950V 0.275 Ohm 17.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 17.5 A | 330 mOhms | 40 nC | |||||
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623
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.19 Ohm 19.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 19.5 A | 260 mOhms | 4 V | 40 nC | Enhancement | |||
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746
In-stock
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STMicroelectronics | MOSFET N-CH 800V 1.5Ohm typ 5.2A Zener-protected | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 5.2 A | 1.5 Ohms | 3.75 V | 40 nC | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V | 40 nC | Enhancement |
