- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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825
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 95mOhms 30nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 24 A | 82 mOhms | 5 V | 30 nC | Enhancement | |||
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186
In-stock
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Fairchild Semiconductor | MOSFET 650V, 380mOhm SuperFET II MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10.2 A | 330 mOhms | 3.5 V | 30 nC | Enhancement | |||
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169
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | 5 V | 30 nC | Enhancement | |||
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200
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 12 A | 410 mOhms | 3 V | 30 nC | Enhancement | |||
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401
In-stock
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Toshiba | MOSFET N-Ch 15.8A 130W FET 600V 1350pF 38nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 2.7 V to 3.7 V | 30 nC | Enhancement |
