- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,012
In-stock
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Infineon Technologies | MOSFET N-Ch 600V 10.6A D2PAK-2 CoolMOS C6 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10.6 A | 340 mOhms | 3.5 V | 32 nC | CoolMOS | ||||
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468
In-stock
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STMicroelectronics | MOSFET N-Ch 800V 0.3Ohm typ MDmesh K5 14A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 14 A | 300 mOhms | 4 V | 32 nC | |||||
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875
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 8.7A D2PAK-2 CoolMOS CFD2 | 30 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | ||||||
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595
In-stock
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IXYS | MOSFET 600V 10A | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 10 A | 740 mOhms | 5.5 V | 32 nC | Enhancement |
