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Maximum Operating Temperature :
Packaging :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFH18N100Q3
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34
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IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A 30 V Through Hole TO-247-3   + 150 C Tube 1 Channel Si N-Channel 1000 V 18 A 660 mOhms   90 nC   HyperFET
FMM60-02TF
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11
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IXYS MOSFET PHASE LEG MOSFET MOD HALF-BRIDGE 33V 33... 30 V Through Hole ISOPLUS-i4-PAK-5 - 55 C + 150 C Tube   Si N-Channel 200 V 33 A 40 mOhms 4.5 V 90 nC    
IXFT18N100Q3
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25
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IXYS MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/18A 30 V SMD/SMT TO-268-3   + 150 C Tube 1 Channel Si N-Channel 1000 V 18 A 660 mOhms   90 nC   HyperFET
IXTP86N20T
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23
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IXYS MOSFET 86 Amps 200V 29 Rds 30 V Through Hole TO-220-3 - 55 C + 175 C Tube   Si N-Channel 200 V 86 A 29 mOhms 5 V 90 nC Enhancement  
APT24F50B
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242
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Microsemi MOSFET Power FREDFET - MOS8 30 V Through Hole TO-247-3 - 55 C + 150 C Reel   Si N-Channel 500 V 24 A 240 mOhms 4 V 90 nC Enhancement  
APT18F60B
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45
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Microsemi MOSFET Power FREDFET - MOS8 30 V Through Hole TO-247-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 19 A 310 mOhms 2.5 V 90 nC Enhancement  
IXTQ86N20T
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IXYS MOSFET 86 Amps 200V 29 Rds 30 V Through Hole TO-3P-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 200 V 86 A 29 mOhms 5 V 90 nC Enhancement  
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