- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,800
In-stock
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IR / Infineon | MOSFET MOSFT 200V 14A 235mOhm 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 165 mOhms | 25 nC | Enhancement | ||||||
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1,824
In-stock
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IR / Infineon | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||||
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284
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 14 A | 235 mOhms | 25 nC | Enhancement | |||||
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2,461
In-stock
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STMicroelectronics | MOSFET N-channel 525 V MDMesh | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 525 V | 5 A | 1 Ohms | 25 nC | ||||||
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23,600
In-stock
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Toshiba | MOSFET DTMOSIV 600V 340mOhm 115A 100W 890pF 25nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 11.5 A | 340 mOhms | 2.7 V to 3.7 V | 25 nC | DTMOSIV | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 11.1 A | 350 mOhms | 2.5 V | 25 nC | Enhancement |
