- Manufacture :
- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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3,066
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC | 30 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 5.5 V | 33 nC | Enhancement | ||||
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807
In-stock
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IXYS | MOSFET 44 Amps 100V 25.0 Rds | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 85 V | 44 A | 22 mOhms | 4.5 V | 33 nC | Enhancement | TrenchMV | |||
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920
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A PAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC | ||||||
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VIEW | STMicroelectronics | MOSFET N-Ch 650 V 1.1 Ohm 5.4 A SuperMESH3 | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 5.4 A | 1.1 Ohms | 3.75 V | 33 nC | Enhancement | SuperMesh | |||
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VIEW | STMicroelectronics | MOSFET N-Ch 525V 0.95 Ohm 6A SuperFREDmesh3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 1.15 Ohms | 33 nC | Enhancement | |||||
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953
In-stock
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STMicroelectronics | MOSFET N-channel 525 V 6.3 A DPAK D | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 525 V | 6 A | 850 mOhms | 33 nC |
