- Package / Case :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 950V 0.68 Ohm 10A SuperMESH3 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 10 A | 850 mOhms | 51 nC | Enhancement | ||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 10 A | 680 mOhms | 4 V | 51 nC | ||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 950V SuperMESH3 Zener-Protected 10A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 10 A | 680 mOhms | 4 V | 51 nC |
