MOSFET - Kaimeite

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3 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	TK6Q60W,S1VQ	1+ $1.810 10+ $1.460 100+ $1.170 500+ $1.020		PDF RFQ	78 In-stock	Toshiba	MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC	30 V	Through Hole	TO-251-3	- 55 C	+ 150 C	Reel	1 Channel	Si	N-Channel	600 V	6.2 A	680 mOhms	2.7 V to 3.7 V	12 nC		DTMOSIV
	TK6A60W,S4VX	1+ $2.250 10+ $1.820 100+ $1.450 500+ $1.270		PDF RFQ	121 In-stock	Toshiba	MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC	30 V	Through Hole	TO-220FP-3	- 55 C	+ 150 C		1 Channel	Si	N-Channel	600 V	6.2 A	680 mOhms	2.7 V to 3.7 V	12 nC	Enhancement
	STF2LN60K3	1+ $1.100 10+ $0.851 100+ $0.677 500+ $0.618		PDF RFQ	95,000 In-stock	STMicroelectronics	MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET	30 V	Through Hole	TO-220-3			Tube	1 Channel	Si	N-Channel	600 V	2 A	4.5 Ohms	4.5 V	12 nC	Enhancement

TK6Q60W,S1VQ

TK6Q60W,S1VQ

Toshiba

MOSFET DTMOSIV 600V 820mOhm 6.2A 60W 390pF 12nC

Stock : 78

1+: $1.810

10+: $1.460

100+: $1.170

500+: $1.020

TK6A60W,S4VX

TK6A60W,S4VX

Toshiba

MOSFET N-Ch 6.2A 30W FET 600V 390pF 12nC

Stock : 121

1+: $2.250

10+: $1.820

100+: $1.450

500+: $1.270

STF2LN60K3

STF2LN60K3

STMicroelectronics

MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET

Stock : 95,000

1+: $1.100

10+: $0.851

100+: $0.677

500+: $0.618

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