- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1,242
In-stock
|
Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 185mOhms 12nC | 30 V | SMD/SMT | SOT-223-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC | Enhancement | ||||
|
|
2,259
In-stock
|
Infineon Technologies | MOSFET MOSFT 150V 2.6A 185mOhm 12nC | 30 V | SMD/SMT | SOT-223-4 | Reel | 1 Channel | Si | N-Channel | 150 V | 2.6 A | 185 mOhms | 12 nC | |||||||
|
|
GET PRICE |
9,990
In-stock
|
onsemi | MOSFET NFET DPAK 2.6A 3.6R | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 125 C | Reel | 1 Channel | Si | N-Channel | 600 V | 2.6 A | 3.3 Ohms | 4.5 V | 12 nC |
