- Rds On - Drain-Source Resistance :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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990
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.29 Ohm typ., 14 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | |||
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700
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-281-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 900 mOhms | 3 V | 12 nC | Enhancement |
