- Manufacture :
- Mounting Style :
- Package / Case :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
55
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | ||||||||
|
30
In-stock
|
IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A | 30 V | SMD/SMT | TO-268-3 | Tube | 1 Channel | Si | N-Channel | 300 V | 50 A | 80 mOhms | 65 nC | HyperFET | ||||||||
|
1,190
In-stock
|
Toshiba | MOSFET DTMOSIV-High Speed 600V 88mVGS=10V) | 30 V | SMD/SMT | DFN8x8-5 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 78 mOhms | 3.5 V | 65 nC | Enhancement | |||||
|
48
In-stock
|
Toshiba | MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V) | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 7.7 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | ||||||
|
24
In-stock
|
Toshiba | MOSFET DTMOSIV-H/S 600V 88mOhmmax(VGS=10V) | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 30.8 A | 73 mOhms | 3.5 V | 65 nC | Enhancement | |||||
|
VIEW | IXYS | MOSFET 26 Amps 500V 0.23 Ohm Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 26 A | 230 mOhms | 5.5 V | 65 nC | Enhancement | PolarHV |