- Manufacture :
- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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298
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | ||
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30
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | ||
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9
In-stock
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IXYS | MOSFET 10 Amps 1000V 1.4 Rds | 30 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | - 3.5 V | 130 nC | Enhancement | |||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 56 A | 45 mOhms | 4 V | 130 nC | Enhancement | |||||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 300 V | 40 A | 85 mOhms | 4 V | 130 nC | Enhancement | Power MOS V |
