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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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45
In-stock
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IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | ||
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10
In-stock
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IXYS | MOSFET 850V/90A Ultra Junction X-Class | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 850 V | 90 A | 41 mOhms | 3.5 V | 340 nC | Enhancement | HiPerFET | ||
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26
In-stock
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Microsemi | MOSFET POWER MOS V 800V 27A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | 4 V | 340 nC | Enhancement | ||||
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28
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 84 A | 65 mOhms | 3 V | 340 nC | Enhancement | ||||
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26
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 84 A | 55 mOhms | 2.5 V | 340 nC | Enhancement | ||||
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GET PRICE |
29
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 84 A | 65 mOhms | 4 V | 340 nC | Enhancement | |||||
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GET PRICE |
145
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 84 A | 65 mOhms | 4 V | 340 nC | Enhancement |
