- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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823
In-stock
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STMicroelectronics | MOSFET N-Ch 900 Volt 11 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 880 mOhms | 113 nC | Enhancement | ||||
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244
In-stock
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STMicroelectronics | MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8.3 A | 1.38 Ohms | 113 nC | Enhancement | ||||
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29
In-stock
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IXYS | MOSFET 650V/9A Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 52 A | 68 mOhms | 3 V | 113 nC | Enhancement |
