- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 500 V | 75 A | 75 mOhms | 3 V | 290 nC | Enhancement | ||||
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13
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 75 A | 75 mOhms | 4 V | 290 nC | Enhancement | ||||||
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17
In-stock
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Microsemi | MOSFET Power MOSFET - MOS7 | 30 V | Through Hole | TO-39-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1.2 kV | 22 A | 570 mOhms | 3 V | 290 nC | Enhancement | |||||
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14
In-stock
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Microsemi | MOSFET Power FREDFET - MOS5 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 200 V | 100 A | 22 mOhms | 4 V | 290 nC | Enhancement | Power MOS V | |||||
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32
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 500 V | 75 A | 75 mOhms | 4 V | 290 nC | Enhancement | ||||||
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15
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 75 A | 75 mOhms | 3 V | 290 nC | Enhancement |
