- Mounting Style :
- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Applied Filters :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,834
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 3 A | 2.9 Ohms | 3 V | 12.5 nC | Enhancement | |||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 3 A | 3.5 Ohms | 4 V | 12.5 nC | Enhancement | |||
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1,508
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | ||||
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507
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC | ||||
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1,000
In-stock
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STMicroelectronics | MOSFET N-CH 950V 2Ohm typ 3.5A Zener-protected | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 950 V | 3.5 A | 2 Ohms | 4 V | 12.5 nC |
