- Package / Case :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
175
In-stock
|
IXYS | MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-264-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 98 A | 50 mOhms | 5 V | 197 nC | HyperFET | ||||||
|
|
45
In-stock
|
IXYS | MOSFET 500V 98A 0.05Ohm PolarP3 Power MOSFET | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 98 A | 50 mOhms | 5 V | 197 nC | HyperFET | ||||||
|
|
19
In-stock
|
IXYS | MOSFET 26 Amps 1000V 0.39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 430 mOhms | 6.5 V | 197 nC | Enhancement | Polar, HiPerFET |
