MOSFET - Kaimeite

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4 products

IMAGE	PART NO.	PRICE	QUANTITY		STOCK	MANUFACTURE	DESCRIPTION	Vgs - Gate-Source Voltage	Mounting Style	Package / Case	Minimum Operating Temperature	Maximum Operating Temperature	Packaging	Number of Channels	Technology	Transistor Polarity	Vds - Drain-Source Breakdown Voltage	Id - Continuous Drain Current	Rds On - Drain-Source Resistance	Vgs th - Gate-Source Threshold Voltage	Qg - Gate Charge	Channel Mode	Tradename
	IXFN32N120P	1+ $53.560 5+ $52.370 10+ $49.970 25+ $47.880		PDF RFQ	42 In-stock	IXYS	MOSFET 32 Amps 1200V	30 V	Chassis Mount	SOT-227-4	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	1200 V	32 A	310 mOhms	6.5 V	360 nC	Enhancement	Polar, HiPerFET
	IXFN82N60P	1+ $28.030 5+ $27.740 10+ $25.850 25+ $24.690		PDF RFQ	46 In-stock	IXYS	MOSFET DIODE Id82 BVdass600	30 V	Chassis Mount	SOT-227-4	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	600 V	72 A	75 mOhms	5 V	240 nC	Enhancement	Polar, HiPerFET
	IXFN32N100P	1+ $26.110 5+ $25.850 10+ $24.090 25+ $23.010		PDF RFQ	30 In-stock	IXYS	MOSFET 32 Amps 1000V 0.32 Rds	30 V	Chassis Mount	SOT-227-4	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	1000 V	27 A	320 mOhms	6.5 V	225 nC	Enhancement	Polar, HiPerFET
	IXFN20N120P	10+ $32.930 30+ $31.460 100+ $28.120 250+ $26.830	GET PRICE VIEW	PDF RFQ		IXYS	MOSFET 20 Amps 1200V 0.6 Rds	30 V	Chassis Mount	SOT-227-4	- 55 C	+ 150 C	Tube	1 Channel	Si	N-Channel	1200 V	20 A	570 mOhms	6.5 V	193 nC	Enhancement	Polar, HiPerFET

IXFN32N120P

IXFN32N120P

IXYS

MOSFET 32 Amps 1200V

Stock : 42

1+: $53.560

5+: $52.370

10+: $49.970

25+: $47.880

IXFN82N60P

IXFN82N60P

IXYS

MOSFET DIODE Id82 BVdass600

Stock : 46

1+: $28.030

5+: $27.740

10+: $25.850

25+: $24.690

IXFN32N100P

IXFN32N100P

IXYS

MOSFET 32 Amps 1000V 0.32 Rds

Stock : 30

1+: $26.110

5+: $25.850

10+: $24.090

25+: $23.010

IXFN20N120P

IXFN20N120P

IXYS

MOSFET 20 Amps 1200V 0.6 Rds

Stock : 0

10+: $32.930

30+: $31.460

100+: $28.120

250+: $26.830

GET PRICE

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