- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
8 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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300
In-stock
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IXYS | MOSFET 64.0 Amps 500 V 0.09 Ohm Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 64 A | 85 mOhms | 5.5 V | 150 nC | Enhancement | PolarHV, HiPerFET | ||||
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870
In-stock
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IXYS | MOSFET 16 Amps 800V 0.6 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 16 A | 600 mOhms | 5 V | 71 nC | Enhancement | PolarHV, HiPerFET | ||||
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81
In-stock
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IXYS | MOSFET 20 Amps 800V 0.52 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 20 A | 520 mOhms | 5 V | 86 nC | Enhancement | PolarHV, HiPerFET | ||||
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52
In-stock
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IXYS | MOSFET 44 Amps 800V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 44 A | 190 mOhms | 5 V | 198 nC | Enhancement | PolarHV, HiPerFET | ||||
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55
In-stock
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IXYS | MOSFET DIODE Id14 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 720 mOhms | 5.5 V | 61 nC | Enhancement | PolarHV, HiPerFET | ||||
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18
In-stock
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IXYS | MOSFET DIODE Id26 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 25 A | 200 mOhms | 5 V | 200 nC | Enhancement | PolarHV, HiPerFET | ||||
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62
In-stock
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IXYS | MOSFET 10 Amps 800V 1.1 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 10 A | 1.1 Ohms | 5.5 V | 40 nC | Enhancement | PolarHV, HiPerFET | ||||
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180
In-stock
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IXYS | MOSFET 600V 22A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 22 A | 350 mOhms | 5.5 V | 58 nC | Enhancement | PolarHV, HiPerFET |