- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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9
In-stock
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IXYS | MOSFET tbd Amps 500V 0.06 Ohms Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 70 A | 52 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | ||
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18
In-stock
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IXYS | MOSFET 42 Amps 800V 0.15 Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 40 A | 150 mOhms | 5 V | 250 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET | ||
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25
In-stock
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IXYS | MOSFET 82 Amps 600V 0.78 Ohm Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 82 A | 78 mOhms | 5 V | 240 nC | Enhancement | PolarHV, ISOPLUS264, HiPerFET |
