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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Configuration | Technology | Transistor Polarity | Channel Mode | Rise Time | Transistor Type | Package | Installation style | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | |
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Toshiba Semiconductor | MOSFET 220NIS2 PLN,DISCON(08-10)/PHASE-OUT(11-01)/OB... | 30 V | - 55 C | + 150 C | 1 Channel | 10.16 mm | 4.45 mm | 15.1 mm | Single | Si | N-Channel | Enhancement | 15 ns | 1 N-Channel | Reel | Through Hole | 600 V | 3.5 A | 2.2 Ohms | 35 W | 8 ns | 2 ns |
