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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Minimum Operating Temperature | Maximum Operating Temperature | Number of Channels | Length | Width | Height | Configuration | Technology | Transistor Polarity | Channel Mode | Rise Time | Fall Time | Installation style | Vds-drain source breakdown voltage | Id-continuous drain current | Rds On-drain source on-resistance | Pd-power dissipation | Typical shutdown delay time | Typical on-delay time | |
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7,500
In-stock
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Toshiba Semiconductor | Silicon N Channel MOS Type (π−MOSV) | 30 V | - 55 C | + 150 C | 1 Channel | 15.5 mm | 4.5 mm | 20 mm | Single | Si | N-Channel | Enhancement | 30 ns | 50 ns | Through Hole | 500 V | 20 A | 270 mOhms | 150 W | 71 ns | 23 ns |
