- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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250
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 8 A | 1.5 Ohms | 4 V | 80 nC | Enhancement | POWER MOS 8 | |||
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57
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 7 A | 1.57 Ohms | 4 V | 80 nC | Enhancement | POWER MOS 8 | |||
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42
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 9 A | 1.4 Ohms | 4 V | 80 nC | Enhancement | |||||
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40
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 9 A | 1.6 Ohms | 4 V | 80 nC | Enhancement | |||||
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40
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 13 A | 800 mOhms | 4 V | 80 nC | Enhancement |
