- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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238
In-stock
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IXYS | MOSFET 0.75 Amps 1000V 15 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
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96
In-stock
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IXYS | MOSFET 7 Amps 1000V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | 6 V | 47 nC | Enhancement | Polar, HiPerFET | ||||
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101
In-stock
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IXYS | MOSFET High Voltage Power MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 2.5 V | 7.8 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET Polar Power MOSFET HiPerFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | 6 V | 33.4 nC | Enhancement | Polar, HiPerFET |
