- Manufacture :
- Rds On - Drain-Source Resistance :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
950
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 8 A | 550 mOhms | 3 V | 15 nC | Enhancement | ||||
|
|
599
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 950 V | 8 A | 800 mOhms | 4 V | 22 nC | Enhancement | |||
|
|
160
In-stock
|
IXYS | MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | ||||
|
|
200
In-stock
|
IXYS | MOSFET 700V/8A Ultra Junct X2-Class MOSFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 700 V | 8 A | 500 mOhms | 3 V | 12 nC | Enhancement | |||
|
|
75
In-stock
|
IXYS | MOSFET 8 Amps 500V 0.8 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 8 A | 800 mOhms | Enhancement | |||||
|
|
VIEW | STMicroelectronics | MOSFET N-Ch 650 Volt 5 Amp | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 8 A | 900 mOhms | Enhancement |
