- Manufacture :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Tradename :
3 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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789
In-stock
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Fairchild Semiconductor | MOSFET 500V N-Channel Adv Q-FET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 500 V | 5 A | 1.4 Ohms | Enhancement | QFET | ||||||
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150
In-stock
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IXYS | MOSFET 5.0 Amps 600 V 1.6 Ohm Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.7 Ohms | Enhancement | |||||||
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VIEW | IXYS | MOSFET Polar Power MOSFET HiPerFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | 6 V | 33.4 nC | Enhancement | Polar, HiPerFET |