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Vds - Drain-Source Breakdown Voltage :
Qg - Gate Charge :
2 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
STB20N90K5
1+
$6.090
10+
$5.500
25+
$5.250
100+
$4.560
RFQ
140
In-stock
STMicroelectronics MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... 30 V SMD/SMT TO-263-3 - 55 C + 150 C   1 Channel Si N-Channel 900 V 20 A 210 mOhms 3 V 40 nC Enhancement
IXTA20N65X
1+
$6.260
10+
$5.660
25+
$5.400
100+
$4.690
RFQ
50
In-stock
IXYS MOSFET 650V/9A Power MOSFET 30 V Through Hole TO-263-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 20 A 210 mOhms 3 V 35 nC Enhancement
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