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Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Rds On - Drain-Source Resistance :
7 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Qg - Gate Charge Channel Mode
STB12NM50T4
1+
$3.620
10+
$3.080
100+
$2.670
250+
$2.530
1000+
$1.920
RFQ
752
In-stock
STMicroelectronics MOSFET N-Ch 500 Volt 12 Amp 30 V SMD/SMT TO-263-3 - 65 C + 150 C Reel 1 Channel Si N-Channel 500 V 12 A 350 mOhms   Enhancement
STB20NM50T4
1+
$4.450
10+
$3.780
100+
$3.280
250+
$3.110
1000+
$2.360
RFQ
783
In-stock
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 30 V SMD/SMT TO-263-3 - 65 C + 150 C Reel 1 Channel Si N-Channel 500 V 20 A 250 mOhms   Enhancement
STB11NM60FDT4
1000+
$2.500
2000+
$2.380
5000+
$2.290
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600 Volt 11 Amp 30 V SMD/SMT TO-263-3 - 65 C + 150 C Reel 1 Channel Si N-Channel 600 V 11 A 450 mOhms   Enhancement
STB11NM60T4
1000+
$1.840
2000+
$1.750
5000+
$1.690
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600 Volt 11 Amp 30 V SMD/SMT TO-263-3 - 65 C + 150 C Reel 1 Channel Si N-Channel 600 V 11 A 450 mOhms   Enhancement
STB20NM60D
1000+
$2.940
2000+
$2.800
VIEW
RFQ
STMicroelectronics MOSFET N Ch 600V 0.26 Ohm 20A 30 V SMD/SMT TO-263-3 - 65 C + 150 C Reel 1 Channel Si N-Channel 600 V 20 A 290 mOhms   Enhancement
STB20NM50FDT4
1000+
$2.800
2000+
$2.660
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 500 Volt 20 Amp 30 V SMD/SMT TO-263-3 - 65 C + 150 C Reel 1 Channel Si N-Channel 500 V 20 A 250 mOhms 38 nC Enhancement
STB20NM60T4
1000+
$3.090
2000+
$2.940
VIEW
RFQ
STMicroelectronics MOSFET N-Ch 600 Volt 20 Amp 30 V SMD/SMT TO-263-3 - 65 C + 150 C Reel 1 Channel Si N-Channel 600 V 20 A 290 mOhms   Enhancement
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