- Manufacture :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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627
In-stock
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Fairchild Semiconductor | MOSFET UniFET 500V 10A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 9 A | 850 mOhms | Enhancement | UniFET | |||||
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1,074
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/9A/ QFET C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 9 A | 850 mOhms | Enhancement | QFET | |||||
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220
In-stock
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Fairchild Semiconductor | MOSFET 600V 9A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 9 A | 650 mOhms | 5 V | 31 nC | UniFET FRFET | ||||||
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632
In-stock
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STMicroelectronics | MOSFET N-Ch, 400V-0.49ohms Zener SuperMESH 9A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 9 A | 550 mOhms | 3.75 V | 32 nC | Enhancement | ||||
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703
In-stock
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STMicroelectronics | MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 9 A | 900 mOhms | 72 nC | Enhancement | |||||
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46,800
In-stock
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Toshiba | MOSFET PLN MOS 900V 1300m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 9 A | 1 Ohms | 4 V | 46 nC | Enhancement |
