- Tradename :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,000
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 11 A | 450 mOhms | 3 V | 24 nC | Enhancement | CoolMOS | ||||
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671
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 17 A | 280 mOhms | 3 V | 36 nC | Enhancement | CoolMOS | ||||
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435
In-stock
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Infineon Technologies | MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.4 Ohms | 3 V | 10 nC | Enhancement | CoolMOS | ||||
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391
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 445 mOhms | 3 V | 22 nC | Enhancement | ||||
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985
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4 A | 1.5 Ohms | 3 V | 5 nC | Enhancement | ||||
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188
In-stock
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STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
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941
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 4 A | 1.4 Ohms | 3 V | 17 nC | Enhancement | ||||
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1,664
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1050 V | 6 A | 1 Ohms | 3 V | 21.5 nC | Enhancement | ||||
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864
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.55 Ohm typ., 8 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 8 A | 630 mOhms | 3 V | 15 nC | Enhancement | |||||
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755
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.73 Ohm typ., 7 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 900 mOhms | 3 V | 12 nC | Enhancement | |||||
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769
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.95 Ohm typ., 5 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 5 A | 1.15 Ohms | 3 V | 12 nC | Enhancement | |||||
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993
In-stock
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onsemi | MOSFET NFET TO220FP 600V 7. | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 980 mOhms | 3 V | 47 nC | Enhancement | ||||
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1,046
In-stock
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onsemi | MOSFET NFET TO220FP 600V 4. | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.8 A | 1.8 Ohms | 3 V | 29 nC | Enhancement | ||||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 3 V | 16 nC | Enhancement | ||||
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133
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 25 A | 120 mOhms | 3 V | 60 nC | Enhancement | ||||
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2,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 340 mOhms | 3 V | 26 nC | Enhancement | ||||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 9.7 A | 350 mOhms | 3 V | 25 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 8 A | 440 mOhms | 3 V | 22 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 35 A | 80 mOhms | 3 V | 115 nC | Enhancement | ||||
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1,480
In-stock
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Fairchild Semiconductor | MOSFET 600V 4.5A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 1.7 Ohms | 3 V | 14.5 nC | UniFET FRFET |
