- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
6 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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615
In-stock
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Fairchild Semiconductor | MOSFET 500V 15A N-Chan FRFET UniFET | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 500 V | 15 A | 370 mOhms | 5 V | 32 nC | UniFET FRFET | |||||||
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632
In-stock
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STMicroelectronics | MOSFET N-Ch, 400V-0.49ohms Zener SuperMESH 9A | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 400 V | 9 A | 550 mOhms | 3.75 V | 32 nC | Enhancement | |||||
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316
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 8.7A TO220FP CoolMOS CFD2 | 30 V | Through Hole | TO-220FP-3 | Tube | 1 Channel | Si | N-Channel | 650 V | 8.7 A | 420 mOhms | 4 V | 32 nC | CoolMOS | |||||||
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198
In-stock
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Toshiba | MOSFET PLN MOS 800V 1700m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 800 V | 6 A | 1.35 Ohms | 4 V | 32 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET PLN MOS 900V 2000m (VGS=10V) TO-220SIS | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 7 A | 1.6 Ohms | 4 V | 32 nC | Enhancement | ||||||
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GET PRICE |
47,500
In-stock
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STMicroelectronics | MOSFET N-channel 800 V, 0.3 Ohm typ., 14 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 14 A | 375 mOhms | 4 V | 32 nC | Enhancement |