Build a global manufacturer and supplier trusted trading platform.
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode
TK6A60D(STA4,Q,M)
1+
$1.650
10+
$1.330
100+
$1.020
500+
$0.903
RFQ
1,074
In-stock
Toshiba MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 6 A 1.25 Ohms 4 V 16 nC Enhancement
TK7A60W5,S5VX
1+
$1.630
10+
$1.320
100+
$1.050
500+
$0.924
RFQ
200
In-stock
Toshiba MOSFET Power MOSFET N-Channel 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 7 A 540 mOhms 3 V 16 nC Enhancement
TK8A50DA(STA4,Q,M)
1+
$1.610
10+
$1.290
100+
$0.993
500+
$0.878
RFQ
366
In-stock
Toshiba MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm 30 V SMD/SMT TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 500 V 7.5 A 760 mOhms 4.4 V 16 nC  
TK8A65W,S5X
1+
$1.780
10+
$1.440
100+
$1.150
500+
$1.000
RFQ
175
In-stock
Toshiba MOSFET Power MOSFET N-Channel 30 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 7.8 A 530 mOhms 2.5 V 16 nC Enhancement
TK5A60D(STA4,Q,M)
1+
$1.570
10+
$1.260
100+
$0.972
500+
$0.859
RFQ
195
In-stock
Toshiba MOSFET N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm 30 V Through Hole TO-220FP-3 - 55 C + 150 C   1 Channel Si N-Channel 600 V 5 A 1.2 Ohms 4.4 V 16 nC  
Page 1 / 1