- Mounting Style :
- Rds On - Drain-Source Resistance :
5 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,074
In-stock
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Toshiba | MOSFET N-Ch FET 600V 3.0s IDSS 10 uA 1.0 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 1.25 Ohms | 4 V | 16 nC | Enhancement | ||||
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200
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 540 mOhms | 3 V | 16 nC | Enhancement | ||||
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366
In-stock
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Toshiba | MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm | 30 V | SMD/SMT | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 500 V | 7.5 A | 760 mOhms | 4.4 V | 16 nC | ||||||
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175
In-stock
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Toshiba | MOSFET Power MOSFET N-Channel | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7.8 A | 530 mOhms | 2.5 V | 16 nC | Enhancement | ||||
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195
In-stock
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Toshiba | MOSFET N-Ch MOS 5A 600V 35W 700pF 1.43 Ohm | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 600 V | 5 A | 1.2 Ohms | 4.4 V | 16 nC |