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- Vgs th - Gate-Source Threshold Voltage :
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26 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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887
In-stock
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Fairchild Semiconductor | MOSFET HIGH POWER | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | Enhancement | SuperFET | ||||
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GET PRICE |
890
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25.5 A | 110 mOhms | Enhancement | |||||
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GET PRICE |
988
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7.4 A | 1 Ohms | Enhancement | |||||
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GET PRICE |
998
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 6.6 A | 1.5 Ohms | Enhancement | |||||
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GET PRICE |
1,000
In-stock
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Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 4.2 A | 3.3 Ohms | Enhancement | |||||
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GET PRICE |
728
In-stock
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Fairchild Semiconductor | MOSFET 600V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4.5 A | 2.5 Ohms | Enhancement | |||||
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GET PRICE |
717
In-stock
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Fairchild Semiconductor | MOSFET N-CH/500V/13A/QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 13 A | 390 mOhms | Enhancement | |||||
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GET PRICE |
238
In-stock
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IR / Infineon | MOSFET PLANAR_MOSFETS | 30 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 44 A | 54 mOhms | 60 nC | Enhancement | ||||
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GET PRICE |
61
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 12 A | 450 mOhms | 3 V | 29 nC | Enhancement | |||
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GET PRICE |
935
In-stock
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STMicroelectronics | MOSFET N-Ch, 600V-1.76ohms Zener SuperMESH 4A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 4 A | 2 Ohms | Enhancement | |||||
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GET PRICE |
1,000
In-stock
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Fairchild Semiconductor | MOSFET 800V N-Channel QFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 3.9 A | 2.8 Ohms | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET NCh trr100 nsn 0.25ohm DTMOS | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V to 4.5 V | 40 nC | Enhancement | |||||
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VIEW | Toshiba | MOSFET MOSFET NChannel 0.22ohm DTMOS | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V to 3.5 V | 35 nC | Enhancement | |||||
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GET PRICE |
970
In-stock
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STMicroelectronics | MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 5.2 A | 1.8 Ohms | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 4.5 A | 1.6 Ohms | 4 V | 13 nC | Enhancement | ||||
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GET PRICE |
792
In-stock
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Toshiba | MOSFET DTMOSIV 600V 190mOhm 15.8A 130W 1350pF | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 190 mOhms | 2.7 V to 3.7 V | 38 nC | DTMOSIV | |||
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GET PRICE |
86
In-stock
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Toshiba | MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 20 A | 130 mOhms | 3.7 V | 48 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 220 mOhms | 2.5 V | 35 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET N-Ch DTMOSIV 600 V 130W 1350pF 15.8A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 600 V | 15.8 A | 160 mOhms | 3.7 V | 38 nC | Enhancement | ||||
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VIEW | Toshiba | MOSFET Power MOSFET N-Channel | 30 V | SMD/SMT | TO-262-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 13.7 A | 250 mOhms | 3 V | 40 nC | Enhancement | ||||
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VIEW | STMicroelectronics | MOSFET N-Ch 600 Volt 10 Amp Zener SuperMESH | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 10 A | 750 mOhms | 50 nC | Enhancement | |||||
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VIEW | STMicroelectronics | MOSFET N-Ch, 600V-1ohm Zener SuperMESH 6A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 6 A | 1.2 Ohms | Enhancement | ||||||
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VIEW | STMicroelectronics | MOSFET N-CHANNEL 500 V 1.22 OHM - 4.4A | 30 V | Through Hole | TO-262-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 4.4 A | 1.5 Ohms | Enhancement | ||||||
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GET PRICE |
524
In-stock
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IR / Infineon | MOSFET MOSFT 150V 83A 15mOhm 71nC | 30 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 150 V | 83 A | 12 mOhms | 71 nC | |||||||
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GET PRICE |
131
In-stock
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IR / Infineon | MOSFET MOSFT 200V 65A 26mOhm 70nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 200 V | 62 A | 26 mOhms | 70 nC | Enhancement | ||||
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GET PRICE |
49
In-stock
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IR / Infineon | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement |
