- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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406
In-stock
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IXYS | MOSFET 1500 V High Voltage Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1500 V | 20 A | 1 Ohms | 4.5 V | 215 nC | Enhancement | ||||
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52
In-stock
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IXYS | MOSFET 2500V 5A HV Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 2500 V | 5 A | 8.8 Ohms | 2 V to 5 V | 200 nC | Enhancement | |||
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71
In-stock
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IXYS | MOSFET LINEAR PWR MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | Enhancement | |||||
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84
In-stock
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IXYS | MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 102 A | 30 mOhms | 3 V | 152 nC | Enhancement | ||||
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56
In-stock
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IXYS | MOSFET Standard Linear Power MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Si | N-Channel | 1500 V | 8 A | 3.6 Ohms | 8 V | 250 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 44 Amps 500V | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 46 A | 160 mOhms | 6 V | 260 nC | Enhancement | |||
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VIEW | IXYS | MOSFET 17 Amps 1200V | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1200 V | 17 A | 990 mOhms | Enhancement |
