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9 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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6,795
In-stock
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IR / Infineon | MOSFET MOSFT 100V 4.5A 60mOhm 33nC | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 33 nC | ||||||||
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3,066
In-stock
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IR / Infineon | MOSFET 100V 1 N-CH HEXFET 60mOhms 33nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 100 V | 4.5 A | 60 mOhms | 5.5 V | 33 nC | Enhancement | ||||
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2,772
In-stock
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Infineon Technologies | MOSFET 200V 1 N-CH HEXFET 170mOhms 26nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 26 nC | Enhancement | |||||
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4,059
In-stock
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IR / Infineon | MOSFET MOSFT 150V 3.6A 90mOhm 28nC | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 3.6 A | 90 mOhms | 28 nC | ||||||||
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142
In-stock
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Infineon Technologies | MOSFET MOSFT 200V 2.5A 170mOhm 26nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 2.5 A | 170 mOhms | 5.5 V | 26 nC | Enhancement | ||||
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1,527
In-stock
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Infineon Technologies | MOSFET MOSFT 30V 14A 9mOhm 39nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 14 A | 8 mOhms | 39 nC | Enhancement | |||||
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1,972
In-stock
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IR / Infineon | MOSFET MOSFT 150V 1.9A 280mOhm 10nC | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | ||||||||
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2,103
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 280mOhms 10nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 150 V | 1.9 A | 280 mOhms | 10 nC | Enhancement | |||||
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1,680
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 9mOhms 39nC | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 30 V | 14 A | 7 mOhms | 4 V | 39 nC | Enhancement |