- Mounting Style :
- Id - Continuous Drain Current :
-
- 1 A (1)
- 1.7 A (2)
- 10.5 A (1)
- 11 A (3)
- 11.4 A (1)
- 12 A (1)
- 15 A (1)
- 18 A (2)
- 18.5 A (4)
- 2.1 A (3)
- 2.2 A (1)
- 2.5 A (1)
- 20 A (4)
- 21 A (1)
- 24 A (2)
- 3 A (4)
- 32 A (1)
- 4 A (2)
- 4.2 A (1)
- 40 A (4)
- 5 A (2)
- 5.1 A (1)
- 5.4 A (1)
- 5.8 A (4)
- 52 A (1)
- 56 A (1)
- 6 A (6)
- 6.3 A (1)
- 7 A (2)
- 7.2 A (1)
- 8 A (5)
- 8.5 A (1)
- 8.6 A (1)
- 9 A (3)
- 9.2 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (2)
- 1.1 Ohms (1)
- 1.2 Ohms (1)
- 1.25 Ohms (1)
- 1.3 Ohms (3)
- 1.4 Ohms (4)
- 1.6 Ohms (3)
- 1.9 Ohms (3)
- 135 mOhms (1)
- 160 mOhms (1)
- 2 Ohms (5)
- 2.2 Ohms (1)
- 2.3 Ohms (5)
- 20 Ohms (1)
- 210 mOhms (6)
- 230 mOhms (1)
- 299 mOhms (4)
- 3.3 Ohms (1)
- 300 mOhms (1)
- 390 mOhms (1)
- 4.2 Ohms (2)
- 4.8 Ohms (3)
- 420 mOhms (2)
- 5.6 Ohms (1)
- 550 mOhms (1)
- 6.5 Ohms (3)
- 600 mOhms (2)
- 660 mOhms (1)
- 7.2 Ohms (3)
- 88 mOhms (2)
- 880 mOhms (1)
- 900 mOhms (1)
- 910 mOhms (1)
- 960 mOhms (1)
- 980 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Tradename :
71 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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100
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
|
|
599
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSF... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 6 A | 910 mOhms | 3 V | 11 nC | Enhancement | |||||
|
|
140
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
50
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
82
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 40 A | 88 mOhms | 3 V | 89 nC | Enhancement | |||||
|
|
182
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
188
In-stock
|
STMicroelectronics | MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOS... | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 900 V | 20 A | 210 mOhms | 3 V | 40 nC | Enhancement | |||||
|
|
5,610
In-stock
|
Fairchild Semiconductor | MOSFET 900V 1.6A 7.8Ohm N-Channel | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | Enhancement | ||||||
|
|
300,300
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 1.7 A | 7.2 Ohms | Enhancement | ||||||
|
|
1,600
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/8A/QFET C-Series | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 6.3 A | 1.6 Ohms | 5 V | 35 nC | Enhancement | QFET | |||
|
|
1,058
In-stock
|
Fairchild Semiconductor | MOSFET N-CH/900V/7A/A.QFET | 30 V | Through Hole | TO-3PF-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 7.2 A | 1.1 Ohms | Enhancement | QFET | |||||
|
|
823
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 11 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 11 A | 880 mOhms | 113 nC | Enhancement | |||||
|
|
688
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 15 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 15 A | 550 mOhms | 190 nC | Enhancement | |||||
|
|
677
In-stock
|
STMicroelectronics | MOSFET N Ch 900V Zener SuperMESH 9.2A | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 9.2 A | 980 mOhms | 95 nC | Enhancement | |||||
|
|
943
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 6 Amp Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | |||||
|
|
869
In-stock
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | |||||||
|
|
501
In-stock
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | |||||||
|
|
2,952
In-stock
|
Infineon Technologies | MOSFET N-Ch 900V 5.1A DPAK-2 | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.1 A | 1.2 Ohms | 3 V | 28 nC | CoolMOS | ||||
|
|
31,187
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement | |||||
|
|
883
In-stock
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
|
|
865
In-stock
|
STMicroelectronics | MOSFET N-Ch 900V 0.25 Ohm 18.5A MDmesh K5 | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 18.5 A | 299 mOhms | 43 nC | ||||||
|
|
298
In-stock
|
IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
|
|
225
In-stock
|
IXYS | MOSFET Polar HiperFET Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 40 A | 210 mOhms | 3.5 V to 6.5 V | 230 nC | HyperFET | ||||
|
|
863
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.9 Ohms | Enhancement | QFET | |||||
|
|
1,351
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 900 V | 5.4 A | 2.3 Ohms | Enhancement | ||||||
|
|
825
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel QFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 3 A | 2.3 Ohms | Enhancement | QFET | |||||
|
|
968
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Ch Q-FET advance C-Series | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 6 A | 1.9 Ohms | Enhancement | QFET | |||||
|
|
1,021
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Chan Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | ||||||
|
|
1,049
In-stock
|
Fairchild Semiconductor | MOSFET 900V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 8 A | 1.4 Ohms | Enhancement | QFET | |||||
|
|
992
In-stock
|
STMicroelectronics | MOSFET N-Ch 900 Volt 5.8 A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 5.8 A | 2 Ohms | 46.5 nC | Enhancement |
