- Mounting Style :
- Id - Continuous Drain Current :
-
- 1.5 A (1)
- 1.6 A (2)
- 10 A (2)
- 11 A (1)
- 12 A (2)
- 13 A (1)
- 14 A (5)
- 15 A (3)
- 17 A (2)
- 18 A (2)
- 2 A (2)
- 2.2 A (1)
- 2.5 A (2)
- 20 A (4)
- 21 A (1)
- 22 A (5)
- 23 A (1)
- 25 A (1)
- 27 A (1)
- 29 A (1)
- 3.5 A (3)
- 30 A (7)
- 32 A (3)
- 35 A (2)
- 37 A (3)
- 38 A (3)
- 44 A (1)
- 5 A (3)
- 6.5 A (2)
- 7 A (3)
- 700 mA (1)
- 750 mA (4)
- 8 A (3)
- 8.3 A (1)
- 9 A (2)
- 9.5 A (1)
- Rds On - Drain-Source Resistance :
-
- 1 Ohms (1)
- 1.05 Ohms (1)
- 1.3 Ohms (1)
- 1.38 Ohms (1)
- 1.4 Ohms (3)
- 1.45 Ohms (2)
- 1.53 Ohms (1)
- 1.6 Ohms (3)
- 1.76 Ohms (1)
- 1.9 Ohms (2)
- 11 Ohms (1)
- 15 Ohms (1)
- 17 Ohms (4)
- 2.7 Ohms (1)
- 2.8 Ohms (3)
- 210 mOhms (1)
- 220 mOhms (2)
- 230 mOhms (1)
- 240 mOhms (1)
- 245 mOhms (1)
- 260 mOhms (1)
- 280 mOhms (2)
- 290 mOhms (1)
- 3.7 Ohms (2)
- 320 mOhms (4)
- 330 mOhms (1)
- 340 mOhms (1)
- 350 mOhms (1)
- 370 mOhms (1)
- 380 mOhms (3)
- 390 mOhms (3)
- 400 mOhms (2)
- 430 mOhms (1)
- 440 mOhms (1)
- 450 mOhms (2)
- 570 mOhms (2)
- 6 Ohms (2)
- 6.8 Ohms (1)
- 600 mOhms (4)
- 640 mOhms (1)
- 670 mOhms (2)
- 7.1 Ohms (2)
- 700 mOhms (1)
- 710 mOhms (1)
- 760 mOhms (2)
- 8.5 Ohms (2)
- 820 mOhms (1)
- 880 mOhms (1)
- 900 mOhms (1)
- 980 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
82 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
14,744
In-stock
|
Fairchild Semiconductor | MOSFET 1000V/1.6A/N-CH | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | ||||||
|
|
1,071
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channe MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
|
849
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | |||||
|
|
113
In-stock
|
IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Through Hole | PLUS-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 44 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | |||
|
|
1,079
In-stock
|
STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | |||||
|
|
175
In-stock
|
IXYS | MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | ||||
|
|
71
In-stock
|
IXYS | MOSFET LINEAR PWR MOSFET N-CHAN 1000V 22A | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | Enhancement | ||||||
|
|
1,197
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5A Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 3.7 Ohms | 42 nC | Enhancement | |||||
|
|
244
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8.3 A | 1.38 Ohms | 113 nC | Enhancement | |||||
|
|
125
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 13A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 13 A | 700 mOhms | 190 nC | Enhancement | |||||
|
|
601
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 V 1.60 Ohm Zener SuperMESH 6.5A | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 6.5 A | 1.6 Ohms | 73 nC | Enhancement | |||||
|
|
1,027
In-stock
|
STMicroelectronics | MOSFET N-Ch 1000 Volt 3.5 A Zener SuperMESH | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 3.5 A | 2.7 Ohms | 42 nC | Enhancement | |||||
|
|
520
In-stock
|
IXYS | MOSFET 12 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.05 Ohms | 6.5 V | 80 nC | Enhancement | Polar, HiPerFET | |||
|
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-Channel 1000V Zener SuperMESH | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2 A | 8.5 Ohms | 16 nC | Enhancement | |||||
|
|
476
In-stock
|
IXYS | MOSFET 7 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | HyperFET | ||||||
|
|
50
In-stock
|
IXYS | MOSFET 38 Amps 1000V 0.21 Rds | 30 V | SMD/SMT | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 29 A | 230 mOhms | Enhancement | HyperFET | |||||
|
|
37
In-stock
|
IXYS | MOSFET 22 Amps 1000V | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 600 mOhms | 5 V | 270 nC | Enhancement | ||||
|
|
57
In-stock
|
IXYS | MOSFET 44 Amps 1000V 0.22 Rds | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 37 A | 220 mOhms | 6.5 V | 305 nC | Enhancement | Polar, HiPerFET | |||
|
|
81,050
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channel QFET | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 1.6 A | 7.1 Ohms | Enhancement | ||||||
|
|
92,000
In-stock
|
Fairchild Semiconductor | MOSFET 1000V N-Channel | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 8 A | 1.45 Ohms | Enhancement | QFET | |||||
|
|
419
In-stock
|
STMicroelectronics | MOSFET N-channel 1000 V, 5.6 Ohm typ., 2.2 A Zener-protected SuperM... | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 1000 V | 2.2 A | 6.8 Ohms | 3 V to 4.5 V | 18 nC | Enhancement | ||||
|
|
47
In-stock
|
IXYS | MOSFET 12 Amps 1000V 1.3 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 12 A | 1.3 Ohms | Enhancement | ||||||
|
|
7
In-stock
|
IXYS | MOSFET 38 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 38 A | 210 mOhms | Enhancement | HyperFET | |||||
|
|
76
In-stock
|
IXYS | MOSFET 15 Amps 1000V 0.76 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 15 A | 760 mOhms | 6.5 V | 97 nC | Enhancement | Polar, HiPerFET | |||
|
|
55
In-stock
|
IXYS | MOSFET 10 Amps 1000V | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 10 A | 1.4 Ohms | 6.5 V | 56 nC | Enhancement | Polar, HiPerFET | |||
|
|
7
In-stock
|
IXYS | MOSFET 30 Amps 1000V | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 30 A | 450 mOhms | Enhancement | ||||||
|
|
238
In-stock
|
IXYS | MOSFET 0.75 Amps 1000V 15 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 4.5 V | 7.8 nC | Enhancement | ||||
|
|
190
In-stock
|
IXYS | MOSFET 5 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 5 A | 2.8 Ohms | HyperFET | ||||||
|
|
96
In-stock
|
IXYS | MOSFET 7 Amps 1000V | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | 6 V | 47 nC | Enhancement | Polar, HiPerFET | ||||
|
|
154
In-stock
|
IXYS | MOSFET 0.75 Amps 1000V 15 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 750 mA | 17 Ohms | 4.5 V | 7.8 nC | Enhancement |
