Build a global manufacturer and supplier trusted trading platform.
Maximum Operating Temperature :
Vds - Drain-Source Breakdown Voltage :
Id - Continuous Drain Current :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IRFR13N15DPBF
1+
$1.440
10+
$1.230
100+
$0.942
500+
$0.833
RFQ
219
In-stock
IR / Infineon MOSFET 150V 1 N-CH HEXFET 180mOhms 19nC 30 V SMD/SMT TO-252-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 150 V 14 A 180 mOhms 3 V to 5.5 V 19 nC Enhancement  
TK16E60W5,S1VX
50+
$2.340
100+
$2.140
250+
$1.930
500+
$1.730
VIEW
RFQ
Toshiba MOSFET Power MOSFET N-Channel 30 V Through Hole TO-220-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 600 V 15.8 A 180 mOhms 3 V 43 nC Enhancement  
IXFH36N55Q2
30+
$14.340
120+
$12.640
270+
$12.020
510+
$11.240
VIEW
RFQ
IXYS MOSFET 36 Amps 550V 0.16 Rds 30 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 550 V 36 A 180 mOhms     Enhancement HyperFET
Page 1 / 1