- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,000
In-stock
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Infineon Technologies | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 5.5 V | 60 nC | Enhancement | |||
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641
In-stock
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Fairchild Semiconductor | MOSFET 200V N-CH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 39 A | 56 mOhms | Enhancement | |||||
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2,670
In-stock
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Fairchild Semiconductor | MOSFET 500V NCH MOSFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 300 V | 59 A | 56 mOhms | Enhancement | |||||
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1,950
In-stock
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IR / Infineon | MOSFET MOSFT 150V 33A 56mOhm 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement | |||||
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3
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 56mOhms 60nC | 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 150 V | 33 A | 56 mOhms | 60 nC | Enhancement |
