- Mounting Style :
- Package / Case :
- Qg - Gate Charge :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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397
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | ||||
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138
In-stock
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IXYS | MOSFET | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Si | N-Channel | 650 V | 102 A | 30 mOhms | 3 V | 152 nC | Enhancement | ||||||
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48
In-stock
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IXYS | MOSFET | 30 V | Screw Mount | SOT-227-4 | - 55 C | + 150 C | Si | N-Channel | 650 V | 76 A | 30 mOhms | 3 V | 152 nC | Enhancement | ||||||
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84
In-stock
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IXYS | MOSFET MOSFET 650V/100A Ultra Junction X2 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 100 A | 30 mOhms | 2.7 V | 180 nC | Enhancement | ||||
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84
In-stock
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IXYS | MOSFET | 30 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 650 V | 102 A | 30 mOhms | 3 V | 152 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 88 Amps 200V 0.03 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 30 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 88 Amps 200V 0.022W Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 30 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 88 Amps 200V 0.028W Rds | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 200 V | 88 A | 30 mOhms | Enhancement | HyperFET |
